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Volume 1 / 1972 - Volume 41 / 2012
479-483
Growth and properties of Hg1-xCdxTe on GaAs, with x − 0.27
V. Natarajan, N. R. Taskar, I. B. Bhat and S. K. Ghandhi
485-492
Characteristics of Pd-doped tin oxide ceramics in response to CO gas
Bi-Shiou Chiou, Jeng-Jen Li and Jeng-Gong Duh
493-499
An experimental and theoretical study of growth in horizontal epitaxial reactors
Percy B. Chinoy, Paul D. Agnello and Sorab K. Ghandhi
501-507
Structural and electrical contact properties of LPE grown GaAs doped with indium
J. F. Chen and C. R. Wie
509-517
A study of aluminum oxide thin films prepared by atmospheric-pressure chemical vapor deposition from trimethylaluminum + oxygen and/or nitrous oxide
Kenneth Michael Gustin and Roy Gerald Gordon
519-525
The diffusion of ion-implanted arsenic in thermally grown SiO2
Yosi Shacham-Diamond, William G. Oldham and Reza Kazerounian
527-531
Spatial localization and diffusion of atomic silicon in delta-doped GaAs
E. F. Schubert, T. H. Chiu, J. E. Cunningham, B. Tell and J. B. Stark
533-541
A theoretical model of the formation morphologies of porous silicon
R. L. Smith, S. -F. Chuang and S. D. Collins
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