67
Foreword
69-74
Probing the mechanisms of growth of gallium arsenide by metalorganic vapor phase epitaxy using experimental and theoretical studies of designed precursors
Douglas F. Foster, Christopher Glidewell and David J. Cole-Hamilton
75-79
Growth of high mobility InSb by metalorganic chemical vapor deposition
D. L. Partin, L. Green and J. Heremans
81-85
High quality compressively strained InP-based GaInAs(P)/GaInAsP multi-quantum well laser structures grown by metalorganic vapor phase epitaxy
S. D. Perrin, C. P. Seltzer and P. C. Spurdens
87-91
Tertiarybutylarsine and tertiarybutylphosphine for the MOCVD growth of low threshold 1.55 μm InxGa1-xAs/InP quantum-well lasers
M. E. Heimbuch, A. L. Holmes, C. M. Reaves, M. P. Mack and S. P. Denbaars, et al.
93-96
Constant indium delivery from trimethylindium/hexadecane slurry
L. W. Fannin, R. H. Pearce and D. W. Webb
97-100
Lateral growth of GaAs on patterned {-1-1-1}B substrates for the fabrication of nano wires using metalorganic molecular beam epitaxy
Yasuhiko Nomura, Yoshitaka Morishita, Shigeo Goto and Yoshifumi Katayama
101-104
Impurity induced disordering of OMVPE-grown ZnSe/ZnS strained layer superlattices by germanium diffusion
T. Yokogawa, P. D. Floyd, M. M. Hashemi and J. L. Merz
105-113
Photodissociation dynamics of DMZn at 193 nm: Implications for the growth of ZnSe films by laser-assisted metalorganic chemical vapor deposition
Joseph A. Elias, Peter J. Wisoff and William L. Wilson
115-119
Wavelength tuning in strained layer InGaAs-GaAs-AlGaAs quantum well lasers by selective-area MOCVD
T. M. Cockerill, D. V. Forbes, H. Han, B. A. Turkot and J. A. Dantzig, et al.
121-124
Atmospheric and low pressure metalorganic vapor phase epitaxial growth of vertical quantum wells and quantum well wires on submicron gratings
G. Vermeire, I. Moerman, Z. Q. Yu, F. Vermaerke and P. Van Daele, et al.
125-133
Control of ordering in GaInP and effect on bandgap energy
L. C. Su, S. T. Pu, G. B. Stringfellow, J. Christen and H. Selber, et al.
135-139
Optical and crystallographic properties of high perfection InP grown on Si(111)
A. Krost, F. Heinrichsdorff, F. Schnabel, K. Schatke and D. Bimberg, et al.
141-146
High electron mobility in (InAs)n(GaAs)n short period superlattices grown by MOVPE for high-electron mobility transistor structure
J. P. André, A. Deswarte, E. Lugagne-delpon, P. Voisin and P. Ruterana
147-151
Growth of (GaAs)1_x(Ge2)x by metalorganic chemical vapor deposition
S. M. Vernon, M. M. Sanfacon and R. K. Ahrenkiel
153-158
Metalorganic vapor phase epitaxial growth and structural characterization of GaAs/InP heterostructures
G. Attolini, P. Franzosi, C. Pelosi, L. Lazzarini and G. Salviati
159-166
Optimization of selective area growth of GaAs by low pressure organometallic vapor phase epitaxy for monolithic integrated circuits
H. Kanber, S. X. Bar, P. E. Norris, C. Beckham and M. Pacer
167-173
Integrated in situ monitoring of a metalorganic vapor phase epitaxy reactor for II–VI epitaxy
S. J. C. Irvine, J. Bajaj and R. V. Gil
175-178
Ion beam mixing characteristics of MOCVD grown InGaAs/GaAs superlattices
D. V. Forbes, J. J. Coleman, J. K. Klatt and R. S. Averback
179-183
In situ spectral reflectance monitoring of III-V epitaxy
K. P. Killeen and W. G. Breiland
185-189
Adjusting trimethylgallium injection time to explore atomic layer epitaxy of GaAs between 425 and 500°C by organometallic vapor phase epitaxy
C. A. Wang and D. M. Tracy
191-194
Interdiffusion and relaxation in metalorganic vapor phase epitaxy grown InGaAs/GaAs strained layer quantum wells
A. K. Srivastava, B. M. Arora and S. Banerjee
195-200
In situ observation of surface morphology of InP grown on singular and vicinal (001) substrates
K. A. Bertness, C. Kramer, J. M. Olson and John Moreland
201-206
Strain distribution in InP grown on patterned Si: Direct visualization by cathodoluminescence wavelength imaging
M. Grundmann, J. Christen, F. Heinrichsdorff, A. Krost and D. Bimberg
207-216
Growth of InAIGaAs strained quantum well structures for reliable 0.8 μm lasers
J. A. Baumann, R. J. Dalby, R. G. Waters, S. L. Yellen and C. Harding, et al.
217-220
Growth kinetics of GaSb by metalorganic vapor phase epitaxy
Wei Guang-Yu and Peng Rui-Wu
221-224
Reaction kinetics control in preparation of CdTe and HgCdTe by hot wall metalorganic vapor phase epitaxy
Ding Yong-Qing, Wei Guang-Yu and Peng Rui-Wu
225-232
Atmospheric and low pressure shadow masked MOVPE growth of InGaAs(P)/InP and (In)GaAs/(Al)GaAs heterostructures and quantum wells
G. Coudenys, I. Moeeman, G. Vermeire, F. Vermaerke and Y. Zhu, et al.
233-237
High performance InP JFETs grown by MOCVD using tertiarybutylphosphine
M. M. Hashemi, J. B. Shealy, P. J. Corvini, S. P. Denbaars and U. K. Mishra
239-242
Carbon and hydrogen incorporation in ZnTe layers grown by metalorganic chemical vapor deposition
Hervé Dumont, Ludvik Svob, Dominique Ballutaud and Ouri Gorochov