• 179-190

  Interfacial Chemistry of InP/GaAs Bonded Pairs

  N. Liu and T.F. Kuech

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• 191-196

  Regular Issue Paper

  Understanding the Effects of Stress on the Crystallization of Amorphous Silicon

  Li Cai, Min Zou, Husam Abu-Safe, Hameed Naseem and William Brown

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• 197-206

  Regular Issue Paper

  Phase Equilibria of the Sn-Ag-Cu-Ni Quaternary System at 210°C

  S.-W. Chen, C.-N. Chiu and K.-C. Hsieh

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• 207-213

  Failure Morphology after the Drop Impact Test of the Ball Grid Array Package with Lead-Free Sn-3.8Ag-0.7Cu on Cu and Ni Under-Bump Metallurgies

  J.W. Jang, J.K. Lin and D.R. Frear

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• 214-219

  Hillock and Whisker Growth on Sn and SnCu Electrodeposits on a Substrate Not Forming Interfacial Intermetallic Compounds

  M.E. Williams, K.-W. Moon, W.J. Boettinger, D. Josell and A.D. Deal

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• 220-225

  Microstructure of External Stress Whiskers and Mechanical Indentation Test Method

  Hiroyuki Moriuchi, Yoshihiro Tadokoro, Masahide Sato, Takeshi Furusawa and Noboru Suzuki

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• 226-231

  Hygrothermal Delaminations in Lead-Free Solder Reflow of Electronic Packages

  D.C.C. Lam and J. Wang

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• 232-241

  Regular Issue Paper

  Failure Mechanisms of Thermomechanically Loaded SnAgCu/Plastic Core Solder Ball Composite Joints in Low-Temperature Co-Fired Ceramic/Printed Wiring Board Assemblies

  O. NOUSIAINEN, J. PUTAALA, T. KANGASVIERI, R. RAUTIOAHO and J. VÄHÄKANGAS

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• 242-244

  A Novel Electroless Process for Embedding a Thin Film Resistor on the Benzocyclobutene Dielectric

  Swapan K. Bhattacharya, Mahesh G. Varadarajan, Premjeet Chahal, Gopal C. Jha and Rao R. Tummala

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• 245-252

  Synthesis of Nanometric-Sized Barium Titanate Powders Using Acetylacetone as the Chelating Agent in a Sol-Precipitation Process

  Kun Ming Hung, Ching Shieh Hsieh, Wein Duo Yang and Hui Ju Tsai

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• 253-257

  Letter

  Memory Effect of Metal-Insulator-Silicon Capacitor with HfO₂-Al₂O₃ Multilayer and Hafnium Nitride Gate

  Shi-Jin Ding, Min Zhang, Wei Chen, David Wei Zhang and Li-Kang Wang

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• 258-265

  Effect of Annealing Ambient on the Self-Formation Mechanism of Diffusion Barrier Layers Used in Cu(Ti) Interconnects

  S. Tsukimoto, T. Kabe, K. Ito and M. Murakami

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