545
Foreword
Jamie Phillips, Robert Stahlbush and Grace Xing
546-549
Open AccessInfluence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells
Z. Chen, N. Fichtenbaum, D. Brown, S. Keller and U.K. Mishra, et al.
550-553
Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors
B.S. Kang, H.T. Wang, F. Ren, M. Hlad and B.P. Gila, et al.
554-557
Scanning Ion Probe Studies of Silicon Implantation Profiles
in AlGaN/GaN HEMT Heterostructures
M. Kocan, G.A. Umana-Membreno, M.R. Kilburn, I.R. Fletcher and F. Recht, et al.
558-563
Characteristics of Green Light-Emitting Diodes Using an InGaN:Mg/GaN:Mg Superlattice as
p
-Type Hole Injection and Contact Layers
J.P. Liu, J.B. Limb, J.-H. Ryou, W. Lee and D. Yoo, et al.
564-568
Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched
n
-Al0.58Ga0.42N
M.A. Miller, B.H. Koo, K.H.A. Bogart and S.E. Mohney
569-572
Electrically Active Defects in GaN Layers Grown With
and Without Fe-doped Buffers by Metal-organic
Chemical Vapor Deposition
G.A. Umana-Membreno, G. Parish, N. Fichtenbaum, S. Keller and U.K. Mishra, et al.
573-577
Growth of GaN Films on Si (100) Buffered with ZnO by Ion-Beam-Assisted Filtered Cathodic Vacuum Arc Technique
Xiao Hong Ji and Ji Wei Zhai
578-584
Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption
Yuh-Renn Wu, John M. Hinckley and Jasprit Singh
585-592
Synthesis and Properties of High-Quality InN Nanowires and Nanonetworks
Z. Cai, S. Garzon, M.V.S. Chandrashekhar, R.A. Webb and G. Koley
593-596
Effect of MBE Growth Conditions on Multiple Electron Transport in InN
Tamara B. Fehlberg, Chad S. Gallinat, Gilberto A. Umana-Membreno, Gregor Koblmüller and Brett D. Nener, et al.
597-602
Cathodoluminescence Study on Spatial Luminescence Properties of InN/GaN Multiple Quantum Wells Consisting
of 1-Monolayer-Thick InN Wells/GaN Matrix
E.S. Hwang, S.B. Che, H. Saito, X. Wang and Y. Ishitani, et al.
603-606
Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence
T. Akagi, K. Kosaka, S. Harui, D. Muto and H. Naoi, et al.
607-610
Junction Temperature Measurements and Thermal Modeling
of GaInN/GaN Quantum Well Light-Emitting Diodes
J. Senawiratne, Y. Li, M. Zhu, Y. Xia and W. Zhao, et al.
611-615
Optical Hall Effect in Hexagonal InN
T. Hofmann, V. Darakchieva, B. Monemar, H. Lu and W.J. Schaff, et al.
616-623
Effect of Anodic Oxidation on the Characteristics of Lattice-Matched AlInN/GaN Heterostructures
C. Pietzka, A. Denisenko, M. Alomari, F. Medjdoub and J.-F. Carlin, et al.
624-627
Enhancement of the Schottky Barrier Height using a Nitrogen-Rich Tungsten Nitride Thin Film for the Schottky Contacts on AlGaN/GaN Heterostructures
Chung-Yu Lu, Edward Yi Chang, Jui-Chien Huang, Chia-Ta Chang and Mei-Hsuan Lin, et al.
628-634
Crystalline SiN
x
Ultrathin Films Grown on AlGaN/GaN Using
In Situ
Metalorganic Chemical Vapor Deposition
Toshiyuki Takizawa, Satoshi Nakazawa and Tetsuzo Ueda
635-640
Formation of Low-Resistance Ohmic Contact by Damage-Proof Selective-Area Growth of Single-Crystal
n
+-GaN Using
Plasma-Assisted Molecular Beam Epitaxy
Hui-Chan Seo, Seung Jae Hong, Patrick Chapman and Kyekyoon(Kevin) Kim
641-645
Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy
M. Zhu, Y. Xia, W. Zhao, Y. Li and J. Senawiratne, et al.
646-654
Open AccessSome Critical Materials and Processing Issues in SiC Power Devices
Anant Agarwal and Sarah Haney
655-661
Open AccessImaging Surface Pits and Dislocations in 4H-SiC by Forescattered Electron Detection and Photoluminescence
Y.N. Picard, K.X. Liu, R.E. Stahlbush and M.E. Twigg
662-665
1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70
Charlotte Jonas, Craig Capell, Al Burk, Qingchun Zhang and Robert Callanan, et al.
666-671
The Effects of Implant Activation Anneal on the Effective Inversion Layer Mobility of 4H-SiC MOSFETs
Sarah Haney and Anant Agarwal
672-680
Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p+n Junction Diodes Grown on 4H-SiC Mesas
Kevin M. Speer, Philip G. Neudeck, David J. Spry, Andrew J. Trunek and Pirouz Pirouz
681-684
Structural and Morphological Investigation of Pendeo-Epitaxy 3C-SiC on Si Substrates
Byeung C. Kim and Michael A. Capano
685-690
Real-Time
In Situ
Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC
B.L. VanMil, K.K. Lew, R.L. Myers-Ward, C.R. Eddy and D.K. Gaskill
691-698
Epitaxial SiC Growth Morphology and Extended Defects Investigated by Electron Backscatter Diffraction and Electron Channeling Contrast Imaging
Yoosuf N. Picard, Mark E. Twigg, Joshua D. Caldwell, Charles R. Eddy and Philip G. Neudeck, et al.
699-705
Influence of Temperature on Shockley Stacking Fault Expansion and Contraction in SiC PiN Diodes
Joshua D. Caldwell, Orest J. Glembocki, Robert E. Stahlbush and Karl D. Hobart
706-712
Investigation of Electron–Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers
Yi Chen, Ning Zhang, Michael Dudley, Joshua D. Caldwell and Kendrick X. Liu, et al.
713-720
Simulation of Grazing-Incidence Synchrotron White Beam X-ray Topographic Images of Micropipes in 4H-SiC and Determination of Their Dislocation Senses
Yi Chen, Michael Dudley, Edward K. Sanchez and Michael F. MacMillan
721-725
Faster Growth of 6H-SiC Single Crystals by a Physical Vapor Transport Technique with Two Crucibles
Jikuan Cheng, Jiqiang Gao, Junlin Liu, Jianfeng Yang and Xian Jiang, et al.
726-729
Silicon Carbide Terahertz Emitting Devices
G. Xuan, P.-C. Lv, X. Zhang, J. Kolodzey and G. DeSalvo, et al.
730-735
Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging
Kendrick X. Liu, Robert E. Stahlbush, Kok-Keong Lew, Rachael L. Myers-Ward and Brenda L. VanMil, et al.
736-742
Open AccessGrowth of Polarity-Controlled ZnO Films on (0001) Al2O3
J.S. Park, J.H. Chang, T. Minegishi, H.J. Lee and S.H. Park, et al.
743-748
Open AccessFirst-Principles Studies of Metal (111)/ZnO{0001} Interfaces
Yufeng Dong and L.J. Brillson
749-754
Quantum Confinement and Carrier Localization Effects in ZnO/Mg
x
Zn1−
x
O Wells Synthesized by Pulsed Laser Deposition
W.E. Bowen, W. Wang, E. Cagin and J.D. Phillips
755-759
ZnO Thin Film, Device, and Circuit Fabrication using Low-Temperature PECVD Processes
Jie Sun, Devin A. Mourey, Dalong Zhao and Thomas N. Jackson
760-763
A High-Performance Ultraviolet Photoconductive Detector Based on a ZnO Film Grown by RF Sputtering
Zhen Bi, Jingwen Zhang, Xuming Bian, Dong Wang and Xin’an Zhang, et al.
764-769
Annealing Studies on Zinc Oxide Thin Films Deposited by Magnetron Sputtering
Tingfang Yen, Dave Strome, Sung Jin Kim, Alexander N. Cartwright and Wayne A. Anderson
770-775
Electrical Characteristics of
n
-ZnO/
p
-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures
R.S. Ajimsha, M.K. Jayaraj and L.M. Kukreja