2009 International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP)
619
Foreword
Piotr Edelman and Marek Skowronski
620-624
Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe Microanalysis
M.V. Zamoryanskaya, Ya.V. Kuznetsova, T.B. Popova, A.A. Shakhmin and D.A. Vinokurov, et al.
625-629
Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies
F. Domengie, J. L. Regolini and D. Bauza
630-634
Influence of Operating Conditions on Quantum Cascade Laser Temperature
Kamil Pierściński, Dorota Pierścińska, Kamil Kosiel, Anna Szerling and Maciej Bugajski
635-641
Evolution of Optical and Mechanical Properties
of Semiconductors over 40 Years
Sergei Pyshkin and John Ballato
642-647
Accelerated Light-Induced Degradation (ALID) for Monitoring of Defects in PV Silicon Wafers and Solar Cells
Marshall Wilson, Piotr Edelman, Alexandre Savtchouk, John D’Amico and Andrew Findlay, et al.
648-651
Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means
of Scanning Infrared Microscopy
Yuheng Zeng, Xiangyang Ma, Jiahe Chen and Deren Yang
652-655
Defect-Related White-Light Emission from ZnO
in an n-Mg0.2Zn0.8O/n-ZnO/SiOx Heterostructure
on n-Si
Peiliang Chen, Xiangyang Ma, Yuanyuan Zhang, Dongsheng Li and Deren Yang
656-662
The Use of Spatial Analysis Techniques in Defect
and Nanostructure Studies
M.A. Moram, U.E. Gabbai, T.C. Sadler, M.J. Kappers and R.A. Oliver
663-670
LBIC and Reflectance Mapping of Multicrystalline Si Solar Cells
B. Moralejo, M. A. González, J. Jiménez, V. Parra and O. Martínez, et al.
671-676
Effect on Ordering of the Growth of GaInP Layers
on (111)-GaAs Faces
O. Martínez, V. Hortelano, J. Jiménez, V. Parra and C. Pelosi, et al.
677-683
Open AccessOptical and Structural Properties of In0.08GaN/In0.02GaN Multiple Quantum Wells Grown at Different Temperatures and with Different Indium Supplies
U. Zeimer, U. Jahn, V. Hoffmann, M. Weyers and M. Kneissl
684-687
Open AccessElectrical and Optical Properties of Stacking Faults
in 4H-SiC Devices
Bin Chen, Jun Chen, Takashi Sekiguchi, Takasumi Ohyanagi and Hirofumi Matsuhata, et al.
688-693
Cathodoluminescence Study of InP Photonic Structures Fabricated by Dry Etching
R. Chanson, A. Martin, M. Avella, J. Jiménez and F. Pommereau, et al.
694-699
Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy
Daisuke Kosemura, Maki Hattori, Tetsuya Yoshida, Toshikazu Mizukoshi and Atsushi Ogura
700-703
Quantitative Photoelastic Characterization of Residual
Strains in Grains of Multicrystalline Silicon
Masayuki Fukuzawa, Masayoshi Yamada, Md. Rafiqul Islam, Jun Chen and Takashi Sekiguchi
704-708
Detailed Analysis of Temperature Characteristics
of an InGaP/InGaAs/Ge Triple-Junction Solar Cell
Kensuke Nishioka, Tsuyoshi Sueto, Masaki Uchida and Yasuyuki Ota
709-714
Imaging Catastrophic Optical Mirror Damage in High-Power Diode Lasers
Mathias Ziegler, Jens W. Tomm, Ute Zeimer and Thomas Elsaesser
715-718
Threading Screw Dislocations in 4H-SiC Wafer Observed
by the Weak-Beam Method in Bragg-Case X-ray Topography
Hirotaka Yamaguchi and Hirofumi Matsuhata
719-722
Enhancement of Defect Production Rates in n-Type Silicon
by Hydrogen Implantation Near 270 K
Yutaka Tokuda, Youichi Nagae, Hitoshi Sakane and Jyoji Ito
723-726
Defect Imaging in Laser Diodes by Mapping Their Near-Infrared Emission
Jens W. Tomm, Mathias Ziegler, Heiko Kissel and Jens Biesenbach
727-731
Structural Characterization of Doped GaSb Single Crystals by X-ray Topography
M. G. Hönnicke, I. Mazzaro, J. Manica, E. Benine and E. M. da Costa, et al.
732-737
Observation on Defects in Poly-Si Films Prepared by RTCVD Under Nonideal Conditions
Bin Ai, Hui Shen, You-Jun Deng, Chao Liu and Xue-Qin Liang
738-742
X-ray Diffraction Imaging of Improved Bulk-Grown CdZnTe(211) and Its Comparison with Epitaxially Grown CdTe Buffer
Layers on Si and Ge Substrates
J. K. Markunas, L. A. Almeida, R. N. Jacobs, J. Pellegrino and S. B. Qadri, et al.
743-746
Diffraction Contrast of Threading Dislocations in GaN
and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging
M. E. Twigg, Y. N. Picard, J. D. Caldwell, C. R. Eddy and M. A. Mastro, et al.
747-750
Photoluminescence Analysis of Iron Contamination Effect in Multicrystalline Silicon Wafers for Solar Cells
Michio Tajima, Masatoshi Ikebe, Yoshio Ohshita and Atsushi Ogura
751-755
Phonon-Assisted Tunneling from Z1/Z2 in 4H-SiC
A. O. Evwaraye
756-760
Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy
Martina Baeumler, Frank Gütle, Vladimir Polyakov, Markus Cäsar and Michael Dammann, et al.
761-765
Effects of Chemical Treatment on the Luminescence of ZnO
B. Dierre, X. L. Yuan, N. Armani, F. Fabbri and G. Salviati, et al.
766-772
Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy
M. Kaniewska, O. Engström and M. Kaczmarczyk
773-776
Characterization of Generation Lifetime and Surface Generation Velocity of Semiconductor Wafers by a Contactless Zerbst Method
Haruhiko Yoshida and Shingo Kuge
777-780
Electroluminescence Spectral Imaging of Extended Defects
in 4H-SiC
A.J. Giles, J.D. Caldwell, R.E. Stahlbush, B.A. Hull and N.A. Mahadik, et al.
781-786
A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals
M.A. González, O. Martínez, J. Jiménez, C. Frigeri and J.L. Weyher
787-793
Imaging of Metal Impurities in Silicon by Luminescence Spectroscopy and Synchrotron Techniques
Martin C. Schubert, Jonas Schön, Paul Gundel, Holger Habenicht and Wolfram Kwapil, et al.
794-798
Ion-Implantation Control of Ferromagnetism in (Ga,Mn)As Epitaxial Layers
O. Yastrubchak, J. Z. Domagala, J. Sadowski, M. Kulik and J. Zuk, et al.
799-804
Nucleation Mechanism of 6H-SiC Polytype Inclusions Inside 15R-SiC Crystals
Yu Zhang, Hui Chen, Gloria Choi, Balaji Raghothamachar and Michael Dudley, et al.
805-810
Cathodoluminescence Study of Orientation-Patterned GaAs Crystals for Nonlinear Optics
O. Martínez, M. Avella, V. Hortelano, J. Jiménez and C. Lynch, et al.
811-814
Effects of Crystal-Induced Optical Incoherence in Electro-Optic Field Sensors
A. Garzarella, S. B. Qadri and Dong Ho Wu
815-818
Determination of Piezoelectric Fields Across InGaN/GaN Quantum Wells by Means of Electron Holography
Masashi Deguchi, Shigeyasu Tanaka and Takayoshi Tanji
819-822
Electron Scattering Mechanism of FTO Films Grown
by Spray Pyrolysis Method
Minoru Oshima and Kenji Yoshino
823-829
Synchrotron X-Ray Topography Study of Structural Defects
and Strain in Epitaxial Structures of Yb- and Tm-Doped Potassium Rare-Earth Double Tungstates and Their Influence on Laser Performance
B. Raghothamachar, J.J. Carvajal, M.C. Pujol, X. Mateos and R. Solé, et al.