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Volume 1 / 1990 - Volume 23 / 2012
3-4
Editorial Introduction
Editorial
Stuart J. C. Irvine and Peter Capper
633-642
Nitride-based long-wavelength lasers on GaAs substrates
F. Alexandre, E. Gouardes, O. Gauthier-Lafaye, N. Bouadma and A. Vuong, et al.
643-647
Long-wavelength quantum-dot lasers
M. Grundmann, N. N. Ledentsov, F. Hopfer, F. Heinrichsdorff and F. Guffarth, et al.
649-657
The growth of infrared antimonide-based semiconductor lasers by metal-organic chemical vapor deposition
R. M. Biefeld, A. A. Allerman, S. R. Kurtz, E. D. Jones and I. J. Fritz, et al.
659-664
Substrates for wide bandgap nitrides
M. Seyboth, S.-S. Schad, M. Scherer, F. Habel and C. Eichler, et al.
665-670
Critical issues of growth optimization for Ga0.5In0.5P/GaAs heterojunction bipolar transistors
F. Brunner, A. Maaßdorf, P. Kurpas, A. Braun and T. Bergunde, et al.
671-678
Metal organic chemical vapor deposition (MOCVD) of oxides and ferroelectric materials
P. J. Wright, M. J. Crosbie, P. A. Lane, D. J. Williams and A. C. Jones, et al.
679-682
Future challenges for MOVPE – an industrial perspective
S. W. Bland
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