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Volume 1 / 2002 - Volume 10 / 2011
451
Editorial Board
Editorial
D.K. Ferry
453-465
The Role of Quantization Effects on the Operation of 50 nm MOSFETs, 250 nm FIBMOS Devices and Narrow-Width SOI Device Structures
D. Vasileska, I. Knezevic, R. Akis, S. Ahmed and D.K. Ferry
467-474
Study of Electron Transport in SOI MOSFETs Using Monte Carlo Technique with Full-Band Modeling
H. Takeda, N. Mori and C. Hamaguchi
475-480
Fullband Particle-Based Simulation of High-Field Transient Transport in III–V Semiconductors
S. Wigger, M. Saraniti, S. Goodnick and A. Leitenstorfer
481-489
A Landauer Approach to Nanoscale MOSFETs
M. Lundstrom and J.-H. Rhew
491-501
Anisotropic Quantum Dots
J.B. Wang and C. Hines
503-513
The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices
A. Asenov, J.R. Watling, A.R. Brown and D.K. Ferry
515-525
Molecular Conduction: Paradigms and Possibilities
A.W. Ghosh and S. Datta
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