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Volume 1 / 2002 - Volume 10 / 2011
5-14
Efficient time integration of the Boltzmann-Poisson system applied to semiconductor device simulation
Ch. Auer and F. Schürrer
15-26
A deterministic study of hot phonon effects in a 2D electron gas channel formed at an AlGaN/GaN heterointerface
C. Ertler and F. Schürrer
27-34
GaAs X-ray detector characterization through a 3D finite element model
M. Rizzi, M. Maurantonio and B. Castagnolo
35-48
From wave-functions to current-voltage characteristics: overview of a Coulomb blockade device simulator using fundamental physical parameters
J. Sée, P. Dollfus, S. Galdin and P. Hesto
49-52
Computer simulations and experimental study of retention of SONOS device
D. Fuks, A. Kiv, Ya. Roizin and M. Gutman
53-61
Numerical studies of stripline-typed photonic band-gap (PBG) structures using finite difference time domain (FDTD) method
M. -S. Tong, R. Sauleau, V. Krozer and Y. Lu
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