Special Issue on the Proceedings of the Workshop on Modeling and Simulation of Electron Devices held in Pisa, Italy, July 4–5, 2005
69-70
Editorial: Modeling and simulation of electron devices
Giuseppe Iannaccone
71-77
Numerical modeling of TeraHertz electronic devices
L. Varani, C. Palermo, J. F. Millithaler, J. C. Vaissière and E. Starikov, et al.
79-83
Monte Carlo study of electron transport in strained silicon inversion layers
E. Ungersboeck and H. Kosina
85-89
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators
F. Bertazzi, G. Conte, F. Bonani, S. Donati Guerrieri and G. Ghione
91-95
Channel noise modelling of nanoMOSFETs in a partially ballistic transport regime
Giorgio Mugnaini and Giuseppe Iannaccone
97-101
One-dimensional screening effects in bulk-modulated carbon nanotube transistors
L. Latessa, A. Pecchia and A. Di Carlo
103-107
Monte Carlo simulation of terahertz quantum cascade lasers: The influence of the modelling of carrier-carrier scattering
O. Bonno, J.-L. Thobel and F. Dessenne
109-113
Scaling effects in AlGaN/GaN HEMTs: Comparison between Monte Carlo simulations and experimental data
S. Russo, A. Di Carlo, W. Ruythooren, J. Derluyn and M. Germain
115-118
Strain effects in SiN-passivated GaN-based HEMT devices
Fabio Sacconi, Michael Povolotskyi and Aldo Di Carlo
119-123
Sensitivity of single- and double-gate MOS architectures to residual discrete dopant distribution in the channel
P. Dollfus, A. Bournel and J. E. Velázquez
125-129
A study of threshold voltage fluctuations of nanoscale double gate metal-oxide-semiconductor field effect transistors using quantum correction simulation
Yiming Li and Shao-Ming Yu
131-135
Atomistic effect of delta doping layer in a 50 nm InP HEMT
N. Seoane, A. J. García-Loureiro, K. Kalna and A. Asenov
137-142
Silicon-on-insulator non-volatile memories with second-bit effect
L. Perniola and G. Iannaccone
143-148
Simulation of the gate tunnel current in the double gate (DG) MOS transistor
B. Majkusiak and J. Walczak
149-153
Effect of layout parasitics on the current distribution of power MOSFETs operated at high switching frequency
Tonio Biondi, Giuseppe Greco, Gaetano Bazzano and Salvatore Rinaudo
155-159
A fast and stable Poisson-Schrödinger solver for the analysis of carbon nanotube transistors
M. Pourfath, H. Kosina and S. Selberherr
161-165
Efficient calculation of lifetime based direct tunneling through stacked dielectrics
M. Karner, A. Gehring and H. Kosina
167-170
A study of envelope functions in FD-SOI devices for non-parabolic bands
F. M. Gómez-Campos, S. Rodríguez-Bolívar, J. A. Jiménez-Tejada and J. E. Carceller
171-175
Validity of the effective potential approach for the simulation of quantum confinement effects: A Monte-Carlo study
M.-A. Jaud, S. Barraud, P. Dollfus, H. Jaouen and F. De Crecy, et al.
177-180
Numerical simulation of ballistic surface transport in cylindrical nanosystems
Alex Marchi, Susanna Reggiani, Massimo Rudan and Andrea Bertoni
181-186
Modeling turn-off voltage rise in SOI LIGBT
Ettore Napoli, Vasantha Pathirana and Florin Udrea
187-192
Excess drain noise simulation in ultrathin oxides MOSFETs
T. Contaret, G. Ghibaudo, A. Ferron and F. Bœuf
193-197
Complementary split rings resonators (CSRRs): Towards the miniaturization of microwave device design
J. Bonache, I. Gil, J. García-García and F. Martín
199-203
Confined acoustic phonons in ultrathin SOI layers
L. Donetti, F. Gámiz, J. B. Roldán and A. Godoy
205-210
Equivalent circuit for RF flexural free-free MEMS resonators
M. Mastrangeli, A. Nannini, D. Paci and F. Pieri
211-215
Numerical simulation of time resolved charge transport in semiconductor structures for electronic devices
G. Citarella, W. R. Fahrner, H. C. Neitzert, F. Wünsch and M. Kunst
217-222
2D Modeling of nanoscale DG SOI MOSFETs in and near the subthreshold regime
Sigbjørn Kolberg and Tor A. Fjeldly
223-227
Simulation of slow current transients and current collapse in GaN FETs
H. Takayanagi, H. Nakano, K. Yonemoto and K. Horio
229-234
Dielectric ground plane design over bianisotropic media
Alessandro Toscano and Lucio Vegni
235-240
High order explicit versus quasi-linear implicit finite-difference approximation for semiconductor device time-domain macroscopic modelling on parallel computer
Ali El Moussati and C. Dalle
241-245
Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs
Marco Pala, Cyrille Le Royer, Gilles Le Carval and Laurent Clavelier
247-250
Scattering resonances in 1D coherent transport through a correlated quantum dot: An application of the few-particle quantum transmitting boundary method
Andrea Bertoni and Guido Goldoni
251-254
Numerical simulation of small silicon partially insulated MOSFETs
Wilfried Klix, Roland Stenzel and Tom Herrmann
255-258
Numerical simulation of electrical characteristics in nanoscale Si/GaAs MOSFETs
Yiming Li and Wei-Hsin Chen