Special Section: Special Issue on the Proceedings of the International Workshop on Computational Electronics (IWCE-11) Part I. Guest Editor: Hans Kosina
261-266
An iterative matrix solution of the Boltzmann equation for the calculation of diffusion and noise in semiconductors
J. Diyadi, L. Hlou, K. Amechnoue, A. Moatadid and L. Varani, et al.
267-273
SSOR preconditioned GPBiCG method for the linear interference cancellation of asynchronous CDMA systems
L. Yang, R. S. Chen, Y. M. Siu and K. K. Soo
275-281
Super-resolution using neural networks based on the optimal recovery theory
Yizhen Huang and Yangjing Long
283
Editorial
Hans Kosina and Siegfried Selberherr
285-289
The 3D nanometer device project
nextnano
: Concepts, methods, results
Alex Trellakis, Tobias Zibold, Till Andlauer, Stefan Birner and R. Kent Smith, et al.
291-295
A novel approach to three-dimensional semiconductor process simulation: Application to thermal oxidation
Vasily Suvorov, Andreas Hössinger, Zoran Djurić and Neboysha Ljepojevic
297-300
A 3D moving grid algorithm for process simulation
N. Strecker and D. Richards
301-304
Kinetic-energy transport equation for the modeling of ballistic MOSFETs
Ting-Wei Tang and Parmijit. Samra
305-309
Power·delay product in COSMOS logic circuits
Ahmad Al-Ahmadi and Savas Kaya
311-314
Study of fluctuations in advanced MOSFETs using a 3D finite element parallel simulator
M. Aldegunde, A. J. García-Loureiro, K. Kalna and A. Asenov
315-318
Calibration of the Density-Gradient model by using the multidimensional effective-mass Schrödinger equation
Petru Andrei
319-322
Design perspective against random dopant fluctuation and process variation for scaling multi-gate devices
Yoshio Ashizawa, Ryo Tanabe and Hideki Oka
323-326
Simulation of piezoresistivity effect in FETs
Matthias Auf der Maur, Michael Povolotskyi, Fabio Sacconi and Aldo Di Carlo
327-331
Influences of grain structure on thermally induced stresses in 3D IC inter-wafer vias
D. N. Bentz, M. O. Bloomfield, J.-Q Lu, R. J. Gutmann and T. S. Cale
333-336
Intrinsic parameter fluctuations due to random grain orientations in high-κ gate stacks
Andrew R. Brown, Jeremy R. Watling and Asen Asenov
337-340
An evolution algorithm for noise modeling of HEMT’s down to cryogenic temperatures
Alina Caddemi, Francesco Catalfamo and Nicola Donato
341-344
Effects of lithography non-uniformity on device electrical behavior. Simple stochastic modeling of material and process effects on device performance
George P. Patsis, Vassilios Constantoudis and Evangelos Gogolides
345-348
Transient TCAD simulation of three-stage organic ring oscillator
C. Erlen, P. Lugli, M. Fiebig, S. Schiefer and B. Nickel
349-352
A novel framework for distributing computations DisPyTE – distributing Python tasks environment
Tim Fühner, Stephan Popp and Thomas Jung
353-356
Efficient full-flow process simulation for 3D structures including stress modeling
Alp H. Gencer, Andrei Lebedev and Paul Pfäffli
357-360
Simulation of slow current transients and current compression in AlGaAs/GaAs HFETs
H. Ikarashi, K. Kitamura, N. Kurosawa and K. Horio
361-364
A drain current model for Schottky-barrier CNT-FETs
David Jiménez, Xavier Cartoixà, Enrique Miranda, Jordi Suñé and Ferney Alveiro Chaves, et al.
365-370
A simulation-based evolutionary technique for inverse doping profile problem of sub-65 nm CMOS devices
Yiming Li and Cheng-Kai Chen
371-376
Numerical simulation and comparison of electrical characteristics between uniaxial strained bulk and SOI FinFETs
Yiming Li
377-380
Hot electron distribution function for the Boltzmann equation with analytic bands
Orazio Muscato
381-384
Accurate extraction of maximum current densities from the layout
Albert Seidl, Thomas Schnattinger, Andreas Erdmann, Hans Hartmann and Alexandr Petrashenko
385-388
Statistical study of the effect of interface charge fluctuations in HEMTs using a 3D simulator
N. Seoane, A. J. García-Loureiro, K. Kalna and A. Asenov
389-392
Negative gate-overlap in nanoscaled DG-MOSFETs with asymmetric gate bias
Xue Shao and Zhiping Yu
393-395
Human body model ESD simulation including self heating effect
T. Takani and T. Toyabe
397-400
Quantum correction for DG MOSFETs
Martin Wagner, Markus Karner, Johann Cervenka, Martin Vasicek and Hans Kosina, et al.
401-404
Numerical analysis of a DAR IMPATT diode
Alexander M. Zemliak and Santiago Cabrera
405-410
Particle-based simulation: An algorithmic perspective
Marco Saraniti, Shela Aboud, Julien Branlard and Stephen M. Goodnick
411-414
A linear response Monte Carlo algorithm for inversion layers and magnetotransport
Christoph Jungemann, Anh-Tuan Pham and Bernd Meinerzhagen
415-418
Global Modeling of high frequency devices
J. S. Ayubi-Moak, S. M. Goodnick and M. Saraniti
419-423
Introducing energy broadening in semiclassical Monte Carlo simulations
Giulio Ferrari, A. Asenov, M. Nedjalkov and C. Jacoboni
425-429
Schrödinger/Luttinger approach to scaled MOS transport for various crystal orientations and its experimental verifications
Takako Okada
431-434
Joule heating and phonon transport in silicon MOSFETs
Zlatan Aksamija and Umberto Ravaioli
435-438
Modeling
p
-channel SiGe MOSFETs by taking into account the band-structure and the size quantization effects self-consistently
S. Krishnan, D. Vasileska and M. V. Fischetti
439-442
Monte Carlo simulation of double gate MOSFET including multi sub-band description
J. Saint-Martin, A. Bournel, V. Aubry-Fortuna, F. Monsef and C. Chassat, et al.
443-446
An improved Wigner Monte-Carlo technique for the self-consistent simulation of RTDs
Damien Querlioz, Philippe Dollfus, Van-Nam Do, Arnaud Bournel and Van Lien Nguyen
447-450
Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices
Viktor Sverdlov, Tibor Grasser, Hans Kosina and Siegfried Selberherr
451-454
Kinetic Monte-Carlo simulations of germanium epitaxial growth on silicon
Richard Akis and David Ferry
455-457
Self-consistent ion transport simulation in carbon nanotube channels
Jan F. Eschermann, Yan Li, Trudy A. Van der Straaten and Umberto Ravaioli
459-462
Meshless solution of the 3-D semiconductor Poisson equation
Zlatan Aksamija and Umberto Ravaioli
463-466
Model plasma dispersion functions for SO phonon scattering in Monte Carlo simulations of high-
κ
dielectric MOSFETS
J. R. Barker and J. R. Watling
467-469
On a simple and accurate quantum correction for Monte Carlo simulation
F. M. Bufler, R. Hudé and A. Erlebach
471-474
DSMC versus WENO-BTE: A double gate MOSFET example
Maria José Cáceres, José Antonio Carrillo, Irene Gamba, Armando Majorana and Chi-Wang Shu
475-477
Wave-mixing effects on electronic noise in semiconductors
D. Persano Adorno, M. C. Capizzo and M. Zarcone
479-482
Thermal noise in nanometric DG-MOSFET
P. Dollfus, A. Bournel, S. Galdin-Retailleau and J. E. Velázquez
483-486
Full-band particle-based simulation of 85 nm AlInSb/InSb quantum well transistors
Nicolas Faralli, Himanshu Markandeya, Julien Branlard, Marco Saraniti and Stephen M. Goodnick, et al.
487
Erratum
Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices
Viktor Sverdlov, Tibor Grasser, Hans Kosina and Siegfried Selberherr