Special Issue on the Proceedings of the International Workshop on Computational Electronics (IWCE-11) Part II. Guest Editor: Hans Kosina
1-5
On the impact of high-κ gate stacks on mobility: A Monte Carlo study including coupled SO phonon-plasmon scattering
Giulio Ferrari, J. R. Watling, S. Roy, J. R. Barker and A. Asenov, et al.
7-10
Electron injection model for the particle simulation of 3D, 2D, and 1D nanoscale FETs
X. Oriols and E. Fernàndez-Díaz
11-14
Free-carrier grating due to the optical phonon emission in InP
n
+
nn
+ structures
Viktoras Gružinskis, Evgenij Starikov and Pavel Shiktorov
15-18
3D Monte-Carlo device simulations using an effective quantum potential including electron-electron interactions
Clemens Heitzinger, Christian Ringhofer, Shaikh Ahmed and Dragica Vasileska
19-22
Pearson versus gaussian effective potentials for quantum-corrected Monte-Carlo simulation
M.-A. Jaud, S. Barraud, P. Dollfus, H. Jaouen and G. Le Carval
23-26
Threshold energy and impact ionization scattering rate calculations for strained silicon
C. May and F. M. Bufler
27-30
Monte Carlo simulation of harmonic generation in GaAs structures operating under large-signal conditions
D. Persano Adorno, M. C. Capizzo and M. Zarcone
31-34
Generation of even harmonics of sub-THz radiation in bulk GaAs in the presence of a static electric field
D. Persano Adorno, G. Ferrante and M. Zarcone
35-39
Electrothermal Monte Carlo simulation of submicron wurtzite GaN/AlGaN HEMTs
Toufik Sadi, Robert W. Kelsall and Neil J. Pilgrim
41-44
Quantum Ensemble Monte Carlo simulation of silicon-based nanodevices
C. Sampedro, F. Gámiz, A. Godoy and F. Jiménez-Molinos
45-48
Monte Carlo simulation of 2D TASER
Evgenij Starikov, Pavel Shiktorov, Viktoras Gružinskis, Alexandr Dubinov and Vladimir Aleshkin, et al.
49-53
Analysis of nano-scale MOSFET including uniaxial and biaxial strain
Ryo Tanabe, Takahiro Yamasaki, Yoshio Ashizawa and Hideki Oka
55-58
Physical modeling of electron mobility enhancement for arbitrarily strained silicon
Enzo Ungersboeck, Siddhartha Dhar, Gerhard Karlowatz, Hans Kosina and Siegfried Selberherr
59-62
Electron transport in self-switching nano-diodes
Kun-Yuan Xu, Gang Wang and Ai Min Song
63-65
Physical modeling of hole mobility in silicon inversion layers under uniaxial stress
Ji Zhao, Yaohua Tan, Jianping Zou and Zhiping Yu
67-72
Perspectives on solid-state flying qubits
Andrea Bertoni
73-76
Conductance of meandering wires
Emiliano Cancellieri, Andrea Bertoni, Carlo Jacoboni, Marcello Rosini and Giulio Ferrari
77-80
Self-consistent treatment of quantum transport in 10 nm FinFET using Contact Block Reduction (CBR) method
H. Khan, D. Mamaluy and D. Vasileska
81-84
Electron mobility in silicon and germanium inversion layers: The role of remote phonon scattering
Terrance O’Regan and Massimo Fischetti
85-88
First-principles calculations of mobilities in ultrathin double-gate MOSFETs
M. H. Evans, M. Caussanel, R. D. Schrimpf and Sokrates T. Pantelides
89-92
Simulation of the entanglement creation for identical particles scattering in a 2D system
Fabrizio Buscemi, Paolo Bordone and Andrea Bertoni
93-96
Classical and quantum mechanical transport simulations in open quantum dots
Roland Brunner, Ronald Meisels, Friedemar Kuchar, Richard Akis and David K. Ferry, et al.
97-100
Simulation of quantum-ballistic nanoswitches
Alexander Heigl and Gerhard Wachutka
101-104
The Rashba effect and non-Abelian phases in quantum wire devices
A. W. Cummings, R. Akis and D. K. Ferry
105-108
Circuit modeling of flux qubits interacting with superconducting waveguides
G. Csaba, Z. Fahem, F. Peretti and P. Lugli
109-111
Shot noise in transport through quantum dots: Clean versus disordered samples
Florian Aigner, Stefan Rotter and Joachim Burgdörfer
113-116
Effect of elastic processes and ballistic recovery in silicon nanowire transistors
D. Basu, M. J. Gilbert and S. K. Banerjee
117-120
Quantum corrections to semiclassical transport in nanoscale devices using entropy principles
J. P. Bourgade, P. Degond, N. Mauser and C. Ringhofer
121-124
Micromagnetic simulation of current-driven domain wall propagation
G. Csaba, P. Lugli, L. Ji and W. Porod
125-128
Shot noise in resonant tunneling diodes using the non-equilibrium Green’s functions calculation
V. Nam Do, P. Dollfus and V. Lien Nguyen
129-132
Inelastic cotunneling through an interacting quantum dot with a quantum Langevin equation approach
Bing Dong and H. L. Cui
133-136
Simulation of a resonant tunneling diode using an entropic quantum drift-diffusion model
Pierre Degond, Samy Gallego and Florian Méhats
137-140
Numerical simulations of propagation of SCWs in strained Si/SiGe heterostructures at 4.2 and 77 K
Abel Garcia-B., Volodymyr Grimalsky and Edmundo A. Gutierrez-D.
141-144
Phonon exacerbated quantum interference effects in III-V nanowire transistors
M. J. Gilbert and S. K. Banerjee
145-148
Quantum-mechanical effects in multiple-gate MOSFETs
A. Godoy, A. Ruiz-Gallardo, C. Sampedro and F. Gámiz
149-152
Analysis of the influence of band non-parabolicity on the subband structure of a Si quantum wire
F. M. Gómez-Campos, S. Rodríguez-Bolívar and J. E. Carceller
153-157
Boundary condition at the junction
Mark Harmer, Boris Pavlov and Adil Yafyasov
159-162
Investigation of the nonlinearity properties of the DC I-V characteristics of metal-insulator-metal (MIM) tunnel diodes with double-layer insulators
Barnabás Hegyi, Árpád Csurgay and Wolfgang Porod
163-166
Interband tunneling description of holes in Wurtzite GaN at high electric fields
Mats Hjelm, Antonio Martinez, Hans-Erik Nilsson and Ulf Lindefelt
167-170
Control of Fano resonances and phase of a multi-terminal Aharanov-Bohm ring with three embedded quantum dots
Eric R. Hedin, Yong S. Joe and Arkady M. Satanin
171-174
Indirect optimal control of a double quantum dot
Walter Pötz
175-178
Issues in the modeling of carbon nanotube FETs: Structure, gate thickness, and azimuthal asymmetry
D. L. John and D. L. Pulfrey
179-182
A multi-purpose Schrödinger-Poisson Solver for TCAD applications
Markus Karner, Andreas Gehring, Stefan Holzer, Mahdi Pourfath and Martin Wagner, et al.
183-186
Self-consistent quantum transport theory: Applications and assessment of approximate models
Tillmann Kubis and Peter Vogl
187-190
Fast inverse using nested dissection for NEGF
S. Li, S. Ahmed and E. Darve
191-194
3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory
M. Lisieri, G. Fiori and G. Iannaccone
195-198
Eigenstate fitting in the k · p method
H. López, A. N. Chantis, J. Suñé and X. Cartoixá
199-202
Transport calculationof Semiconductor Nanowires Coupled to Quantum Well Reservoirs
Mathieu Luisier, Andreas Schenk, Wolfgang Fichtner and Gerhard Klimeck
203-206
Tunneling enhancement through a barrier surrounded by a mesoscopic cavity
Massimo Macucci and Paolo Marconcini
207-210
Modeling the Inelastic Scattering Effect on the Resonant Tunneling Current
Bogdan Majkusiak
211-214
Tight-binding and
[(k)\vec]·[(p)\vec]\vec k\cdot \vec p methods in carbon nanotubes: features, comparison and improvements
Paolo Marconcini and Massimo Macucci
215-218
Developing a full 3D NEGF simulator with random dopant and interface roughness
A. Martinez, J. R. Barker, A. Asenov, A. Svizhenko and M. P. Anantram
219-222
Simulation of high-field magnetotransport in non-planar 2D electron systems
Gregory J. Meyer and Irena Knezevic
223-225
Numerical simulation of hole transport in silicon nanostructures
Hideki Minari and Nobuya Mori
227-230
EnergyDispersion Relations for Holes in Silicon Quantum Wells and Quantum Wires
Vladimir Mitin, Nizami Vagidov, Mathieu Luisier and Gerhard Klimeck
231-234
Simulation of the Rashba effect in a Multiband Quantum Structure
Omar Morandi and Lucio Demeio
235-238
Ultrafast Wigner transport in quantum wires
Mihail Nedjalkov, Dragica Vasileska, Emanouil Atanassov and Vassil Palankovski
239-242
A many-particle quantum-trajectory approach for modeling electron transport and its correlations in nanoscale devices
Xavier Oriols
243-246
Tunneling CNTFETs
Mahdi Pourfath, Hans Kosina and Siegfried Selberherr
247-249
Conductance of nanowires: Phonon effects
Michael A. Stroscio, Mitra Dutta and Amit Raichura
251-254
Extension of the
R
-Σ method to any order
M. Rudan, E. Gnani, S. Reggiani and G. Baccarani
255-258
Quantized conductance without reservoirs: Method of the nonequilibrium statistical operator
Bart Sorée and Wim Magnus
259-262
NEGF simulation of the RTD bistability
Jan Voves, Tomáš Třebický and Roman Jackiv
263-266
Single-mode performance analysis for vertical-cavity surface-emitting lasers
Stefan Odermatt, Bernd Witzigmann and Sven Eitel
267-270
Monte Carlo simulation of resonant phonon THz quantum cascade lasers
Christian Jirauschek, Giuseppe Scarpa, Paolo Lugli and Maurizio Manenti
271-274
Steering of a dissipative qubit by direct inversion
Markus Wenin and Walter Pötz
275-278
DEPFET sensors, A Test Case To Study 3d Effects
Klaus Gärtner
279-283
Perimeter recombination in thin film solar cells
Abderrahmane Belghachi
285-287
Determination of single mode condition in dielectric rib waveguide with large cross section by finite element analysis
Martina de Laurentis, Andrea Irace and Giovanni Breglio
289-292
Improved simulation of VCSEL distributed Bragg reflectors
Francesco De Leonardis, Vittorio M. N. Passaro and Francesca Magno
293-296
Scattering effect in optical microring resonators
Francesco De Leonardis and Vittorio M. N. Passaro
297-300
Simulation of a high speed interferometer optical modulator in polymer materials
Francesco Dell’Olio, Vittorio M. N. Passaro and Francesco De Leonardis
301-304
Blinking mechanism of colloidal semiconductor quantum dots: Blinking mechanisms
Mitra Dutta, Michael A. Stroscio, Milana Vasudev, Dinakar Ramadurai and Leianne Torres, et al.
305-308
Monte Carlo modeling of X-valley leakage in quantum cascade lasers
Xujiao Gao, Dan Botez and Irena Knezevic
309-312
Input and intrinsic device modeling of VCSELs
K. Minoglou, G. Halkias, E. D. Kyriakis-Bitzaros and D. Syvridis
313-316
Spontaneous polarization effects in nanoscale wurtzite structures
Takayuki Yamanaka, Mitra Dutta and Michael A. Stroscio
317-320
Non-equilibrium Green’s function (NEGF) simulation of metallic carbon nanotubes including vacancy
defects
Neophytos Neophytou, Shaikh Ahmed and Gerhard Klimeck
321-324
Dissipative transport in CNTFETs
Mahdi Pourfath, Hans Kosina and Siegfried Selberherr
325-328
Influence of hot Phonons on the Transport Properties of Single-Wall Carbon Nanotubes
Christoph Auer, Ferdinand Schürrer and Christian Ertler
329-333
Electronic and transport properties of silicon nanowires
F. Sacconi, M. P. Persson, M. Povolotskyi, L. Latessa and A. Pecchia, et al.
335-339
Heat dissipation and non-equilibrium phonon distributions in molecular devices
A. Pecchia, G. Romano, A. Gagliardi, Th. Frauenheim and A. Di Carlo
341-344
Tight-binding calculations of Ge-nanowire bandstructures
Marc Bescond, Nicolas Cavassilas, Karim Nehari and Michel Lannoo
345-348
Quasiparticle correction for electronic transport in molecular wires
Alessio Gagliardi, Thomas A. Niehaus, Thomas Frauenheim, Alessandro Pecchia and Aldo Di Carlo
349-352
Convergence of density functional iterative procedures with a Newton-Raphson algorithm
J. W. Jerome, P. R. Sievert, L. H. Ye, I. G. Kim and A. J. Freeman
353-356
Computation of the I/V characteristic of a molecular switch
Ivo Cacelli, Alessandro Ferretti, Michele Girlanda and Massimo Macucci
357-361
Percolation current in organic semiconductors
L. Li, G. Meller and H. Kosina
363-365
Shockley-Ramo theorem measures conformation changes of ion channels and proteins
Bob Eisenberg and Wolfgang Nonner
367-371
Continuum vs. particle simulations of model nano-pores
C. Millar, S. Roy, O. Beckstein, M. S. P. Sansom and A. Asenov
373-376
Exploring free-energy profiles through ion channels: Comparison on a test case
Enrico Piccinini, Fabio Affinito, Rossella Brunetti, Carlo Jacoboni and Matteo Ceccarelli
377-380
Improving the efficiency of BD algorithms for biological systems simulations
David Marreiro, Yuzhou Tang, Shela Aboud, Eric Jakobsson and Marco Saraniti
381-385
Temporal analysis of valence & electrostatics in ion-motive sodium pump
J. Fonseca, S. Kaya, S. Guennoun and R. Rakowski
387-390
Computational aspects of the three-dimensional feature-scale simulation of silicon-nanowire field-effect sensors for DNA detection
Clemens Heitzinger and Gerhard Klimeck
391-394
Shot noise in single open ion channels: A computational approach based on atomistic simulations
R. Brunetti, F. Affinito, C. Jacoboni, E. Piccinini and M. Rudan