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Volume 1 / 2002 - Volume 10 / 2011
395-400
Electronic properties of carbon nanotubes calculated from density functional theory and the empirical π -bond model
Deep Shah, Nicolas A. Bruque, Khairul Alam, Roger K. Lake and Rajeev R. Pandey
401-408
An effective quantum potential for particle–particle interactions in three-dimensional semiconductor device simulations
Clemens Heitzinger and Christian Ringhofer
409-420
Inverse dopant profiling from transient measurements
M.-T. Wolfram
421-424
Drain temperature determination in dual-gate GaAs MESFETs
M. Kameche
425-430
Original Paper
Engineering model of a biased metal–molecule–metal junction
Matthieu Caussanel, Ronald D. Schrimpf, Leonidas Tsetseris, Matthew H. Evans and Sokrates T. Pantelides
431-437
Modeling and simulation of silicon neuron-to-ISFET junction
Giuseppe Massobrio, Paolo Massobrio and Sergio Martinoia
439-444
Comprehensive approach to modeling threshold voltage of nanoscale strained silicon SOI MOSFETs
M. Jagadesh Kumar, Vivek Venkataraman and Susheel Nawal
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