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Volume 1 / 2002 - Volume 10 / 2011
471-474
Scaling dependence of electron transport in nano-scale Schottky barrier MOSFETs
Shuichi Toriyama and Nobuyuki Sano
475-484
General 2D Schrödinger-Poisson solver with open boundary conditions for nano-scale CMOS transistors
M. Ali Pourghaderi, Wim Magnus, Bart Sorée, Kristin De Meyer and Marc Meuris, et al.
485-493
A numerical method for a transient quantum drift-diffusion model arising in semiconductor devices
Tomoko Shimada and Shinji Odanaka
494-499
Development of electronic device simulations for educational purposes
William R. Frensley
500-508
Atomistic modeling of the electrostatic and transport properties of a simplified nanoscale field effect transistor
Li-Na Zhao, Xue-Feng Wang, Zhen-Hua Yao, Zhu-Feng Hou and Marcus Yee, et al.
509-520
Unified simulation of transport and luminescence in optoelectronic nanostructures
Sebastian Steiger, Ratko G. Veprek and Bernd Witzigmann
521-529
Reliable k ⋅ p band structure calculation for nanostructures using finite elements
Ratko G. Veprek, Sebastian Steiger and Bernd Witzigmann
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