173
Guest editorial
174-191
Monte Carlo simulation of nanoelectronic devices
F. Gamiz, A. Godoy, L. Donetti, C. Sampedro and J. B. Roldan, et al.
192-208
Modeling of modern MOSFETs with strain
V. Sverdlov, O. Baumgartner, T. Windbacher and S. Selberherr
209-224
Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering
(Review invited paper)
D. Esseni, F. Conzatti, M. De Michielis, N. Serra and P. Palestri, et al.
225-241
A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion
S.-M. Hong and C. Jungemann
242-266
On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs
Anh-Tuan Pham, Christoph Jungemann and Bernd Meinerzhagen
267-286
Ballistic quantum transport using the contact block reduction (CBR) method
An introduction
Stefan Birner, Christoph Schindler, Peter Greck, Matthias Sabathil and Peter Vogl
287-306
A new F(ast)-CMS NEGF algorithm for efficient 3D simulations of switching characteristics enhancement in constricted tunnel barrier silicon nanowire MuGFETs
Aryan Afzalian, Nima Dehdashti Akhavan, Chi-Woo Lee, Ran Yan and Isabelle Ferain, et al.
307-323
Modeling drive currents and leakage currents: a dynamic approach
Wim Magnus, Fons Brosens and Bart Sorée
324-335
Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport
Damien Querlioz, Huu-Nha Nguyen, Jérôme Saint-Martin, Arnaud Bournel and Sylvie Galdin-Retailleau, et al.
336-348
Quantum transport including nonparabolicity and phonon scattering: application to silicon nanowires
Aniello Esposito, Martin Frey and Andreas Schenk
349-373
Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques
Asen Asenov, Andrew R. Brown, Gareth Roy, Binjie Cheng and Craig Alexander, et al.
374-381
Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs
Marco G. Pala, Claudio Buran, Stefano Poli and Mireille Mouis
382-388
Nanowire transistor modeling: influence of ionized impurity and correlation effects
Marc Bescond, Changsheng Li and Michel Lannoo
389-397
Comprehensive modeling of optoelectronic nanostructures
Bernd Witzigmann, Ratko G. Veprek, Sebastian Steiger and Jan Kupec
398-409
Modeling of Dye sensitized solar cells using a finite element method
Alessio Gagliardi, Matthias Auf der Maur, Desiree Gentilini and Aldo Di Carlo
410-426
Modeling of circuits and architectures for molecular electronics
Paolo Lugli, Gyorgy Csaba and Christoph Erlen
427-440
Computational study of carbon-based electronics
Mahdi Pourfath and Hans Kosina
441-450
An investigation of performance limits of conventional and tunneling graphene-based transistors
R. Grassi, A. Gnudi, E. Gnani, S. Reggiani and G. Baccarani