The presence of potential barriers and deep traps in
n-InSb/SiO
2/
p-Si heterostructures makes it possible to realize the optical memory function on the basis of this structure. The maximal
memory coefficient measured on the forward current voltage characteristic is as large as ∼10
4. This heterostructure can be used as an optoelectronic memory cell, which provides a means not only for the storage of signals
but also for their summation.
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 9, 2002, pp. 1065–1067.
Original Russian Text Copyright © 2002 by Nikol’ski
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