Journal Article

p-Type conversion of Si-doped n-type GaN epilayers due to neutron transmutation doping and annealing

S.H. Park, T.W. Kang and T.W. Kim

Journal of Materials Science, 2004, Volume 39, Number 20, Pages 6353-6355

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Journal Article

Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates

S. H. Park, T. W. Kang and T. W. Kim

Journal of Materials Science, 2004, Volume 39, Number 9, Pages 3217-3219

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Journal Article

Strain effect and carrier density in modulation-doped Al_xGa_{1 − x}As/In_yGa_{1 − y}As/GaAs step quantum wells with an embedded potential barrier

T. W. Kim and D. Y. Kim

Journal of Materials Science Letters, 2003, Volume 22, Number 23, Pages 1685-1688

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Journal Article

Dependence of the structural and the electrical properties on the Hg/Te flux-rate ratios for Hg_0.7Cd_0.3Te epilayers grown on CdTe buffer layers

Y. S. Ryu, B. S. Song, T. W. Kang and T. W. Kim

Journal of Materials Science, 2004, Volume 39, Number 3, Pages 1147-1149

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Journal Article

LO phonon–plasmon coupled modes and carrier mobilities in heavily Se-doped Ga(As, N) thin films

J. Ibáñez, E. Alarcón-Lladó, R. Cuscó, L. Artús and D. Fowler, et al.

Journal of Materials Science: Materials in Electronics, 2009, Volume 20, Supplement 1, Pages 425-429

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Journal Article

Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique

L. C. Cai, H. Chen, C. L. Bao, Q. Huang and J. M. Zhou

Journal of Materials Science, 2004, Volume 39, Number 7, Pages 2637-2640

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Journal Article

Localization of excited carriers in organometallic vapor-phase epitaxial grown Zn_xCd_1−xSe epilayers with partial existence of lateral compositionally modulated superlattice

X. B. Zhang, K. S. Wong and S. K. Hark

Journal of Electronic Materials, 2002, Volume 31, Number 4, Pages 316-320

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Journal Article

Determination of the free carrier concentration in ultra-pure GaAs epilayers by a photoreflectance technique

O. S. Komkov, A. N. Pikhtin, Yu. V. Zhilyaev and L. M. Fedorov

Technical Physics Letters, 2008, Volume 34, Number 1, Pages 37-39

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