We present an overview of the Epilift technique, which allows the fabrication of single-crystal silicon films, suitable for photovoltaic purposes. Epitaxial layers are grown by liquid phase epitaxy on partially masked, single-crystal silicon substrates. The layers are detached from the substrate by selective chemical or electrochemical etching, allowing the substrate to be re-used. Epilayers grown on (100) substrates display highly textured surfaces as well as narrow overgrowth widths of the epitaxial layer over the oxide, making them particularly suitable for photovoltaic devices.