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Zhiming M. Wang
I-XII
Front matter
1-23
The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding
25-41
Self-assembly of InAs Quantum Dot Structures on Cleaved Facets
43-66
InAs/GaAs Quantum Dots with Multimodal Size Distribution
67-128
Carrier Transfer in the Arrays of Coupled Quantum Dots
129-163
Dynamics of Carrier Transfer into In(Ga)As Self-assembled Quantum Dots
165-215
Spin Phenomena in Self-assembled Quantum Dots
217-238
Excitons and Spins in Quantum Dots Coupled to a Continuum of States
239-266
Quantum Coupling in Quantum Dot Molecules
267-296
Studies of Semiconductor Quantum Dots for Quantum Information Processing
297-336
Stress Relaxation Phenomena in Buried Quantum Dots
337-357
Capacitance-Voltage Spectroscopy of InAs Quantum Dots
359-403
In(Ga)As/GaAs Quantum Dots Grown by MOCVD for Opto-electronic Device Applications
405-420
Area-selective and Site-controlled InAs Quantum-dot Growth Techniques for Photonic Crystal-based Ultra-small Integrated Circuit
421-438
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands
439-460
Growth and Characterization of III-Nitride Quantum Dots and their Application to Emitters
Back matter
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