Good and adhesive semiconducting films of ZnO (∼ 100–1100 nm) were deposited over planar borosilicate glass by spray pyrolysis
and dip & dry method. The films were characterized by X-ray diffraction and optical absorption measurements. The band gap
of these films were found to be 3.21 eV and the films were randomly oriented having average crystallite sizes of 20 to 25
nm.
Paper presented at the 2nd International Conference on Ionic Devices, Anna University, Chennai, India, Nov. 28–30, 2003.