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2006 Workshop on Scienti c Computing in Electronics Engineering

Self-consistent 2D Compact Model for Nanoscale Double Gate MOSFETs

S. KolbergContact Information, T.A. FjeldlyContact Information and B. IñiguezContact Information

(1)  UniK – University Graduate Center and Norwegian University of Science and Technology, N-2027 Kjeller, Norway
(2)  Universitat Rovira i Virgili (URV), Tarragona, E-43001, Spain
Abstract
2D modeling results of the electrostatics and the drain current in nanoscale DG MOSFETs are presented. The modeling of the 2D capacitive coupling within the device is based on the conformal mapping technique. In moderate above-threshold conditions, we obtain self-consistent results, which are in excellent agreement with numerical simulations.

Contact Information S. Kolberg
Email: kolberg@unik.no

Contact Information T.A. Fjeldly
Email: torfj@unik.no

Contact Information B. Iñiguez
Email: benjamin.iniguez@urv.net
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Referenced by
2 newer articles

  1. Børli, H. (2008) Physics based capacitance modeling of short-channel double-gate MOSFETs. physica status solidi (c)
    [CrossRef]
  2. Kolberg, S. (2008) Compact current modeling of short-channel multiple gate MOSFETs. physica status solidi (c)
    [CrossRef]
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