The aim of this work is to examine the effect of dilute nitride and/or antimonite on the critical layer thickness of GaInAs quantum wells on GaAs and InP substrates by means of Matthews and Blakeslee force model. The study provides a comparison of the critical layer thickness of the related GaIn(N)As(Sb) QWs in (001) and (111) orientation. Our calculations indicate the importance of antimonite and the proper usage of it with dilute nitrides in order to tailor the active layer thickness and emission wavelength of quantum well laser devices.