Conventional copper chemical mechanical planarization (CMP) techniques are being pushed to their limits by increasing industrial standards caused by device miniaturization and the use of new materials. There is a need to investigate alternative methods of polishing to maintain and/or improve planarization standards while operating at low downforce. In this study, electrochemical mechanical planarization (ECMP) is considered as an alternative and/or an extension to current CMP processes. ECMP is unique due to the combination of an applied voltage to oxidize Cu and an abrasion from a polishing pad, which potentially allows the system to achieve high levels of planarization through the use of an appropriately tailored electrolyte. An electrolyte containing 1.0 M potassium phosphate salt concentration with a pH value of 2 and a benzotriazole (BTA) concentration of 0.001 M was tested for its planarization capability on patterned Cu structures using a custom built ECMP tool. Feature sizes of the Cu structures were varied from 1 to 6 μm. Similar planarization results were achieved using three pad types. All experiments were performed at 0.5 V versus Ag/AgCl reference. The average step height reduction (SHR) was ~840 nm while the decrease in the average metal thickness removed (λ_avg) was on the order of ~430 nm. Because features were approximately 50% of the substrate area, the total average metal thickness removed was approximately half of the SHR for all three pad types.