Symmetric δ-doped InGaP and AlGaAs PHEMT structures have been grown by organometallic vapor phase epitaxy with properties that approach those of MBE grown AlGaAs structures. The 300 and 77K carrier concentrations for the InGaP PHEMT were 2.72 and 2.56 × 10¹² cm^{2 −2} and the mobilities were 5,920 and 22,000 cm^{2 2}/V.s. These excellent values suggest that problems associated with switching the anion at the channel heterojunction have been overcome. The corresponding values for the AlGaAs PHEMT were 2.51 and 2.19 × 10¹² cm^{2 −2} and 6,500 and 20,400 cm²/V.s. The uniformity in the indium concentration in the InGaAs layer as determined by photoluminescence, photoreflection, double crystal x-ray diffraction, and Rutherford backscattering was found to be good, but the percent In in the AlGaAs pseudo-morphic high electron mobility transistor (PHEMT) was less than that in the InGaP PHEMT even though the programmed values were the same. The uniformity in the doping distribution as determined by secondary ion mass spectroscopy and electrochemical capacitance-voltage measurements was found to be good, but it decreased with distance from the center of the susceptor. Also, most of the dopants in the δ-doped InGaP and AlGaAs layers were activated.