A method is proposed for analyzing the type of nonuniformities in a single-crystalline pure material based on the changes in the asymmetry resistances, determined from the magnitudes of the external potentials on the Hall contacts, in a magnetic field. By comparing their magnetic-field dependences with the analogous dependences of the Hall constant and of the resistivity, measured with different polarities of the voltage applied to the sample, it is shown that the asymmetry resistances are the parameters which are most sensitive to nonuniformity. It was found that nonuniformities of the compensation type, i.e., space-charge regions in which the minority carriers make an appreciable contribution to the Hall constant, are systematically manifested in crystals of especially pure high-resistance silicon. The effective Hall factors were calculated under the conditions of Hall bipolarity of the impurity conductivity and the results are compared with the experimental data.