The Influence of Individual Layer Parameters on the Photoluminescent Properties of InxGa1 – xAs/GaAs System

A. A. Lomov, R. M. Imamov, A. V. Guk, Yu. V. Fedorov, Yu. V. Khabarov and V. G. Mokerov

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Abstract

Structure parameters of individual layers in the In_xGa_{1 – x}As/GaAs system were studied by high-resolution X-ray diffractometry. The parameter uniformity over the layer surface was examined. Obtained results were correlated with photoluminescent data.

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The Influence of Individual Layer Parameters on the Photoluminescent Properties of InxGa1 – xAs/GaAs System

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