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Modelling the Impact of High Level Leakage Optimization Techniques on the Delay of RT-Components

Marko HoyerContact Information, Domenik HelmsContact Information and Wolfgang NebelContact Information

(1)  OFFIS Research Institute D - 26121 Oldenburg, Germany
(2)  University of Oldenburg, D - 26121 Oldenburg, Germany
Abstract
To adress the problem of static power consumption, approaches as ABB and AVS have been proposed to reduce runtime leakage in integrated circuits. Applying these techniques is a trade off between power and delay, which is best decided early in the design flow. Therefore high level power and delay estimation is needed. In our work, we present a fast RT Level delay macro model considering supply and bias voltages and temperature. Errors below 5% combined with only few characterization data enables this approach to be used by high level design tools to support leakage optimization by e.g. ABB and AVS.
This work was supported by the European Commission within the Sixth Framework Programme through the CLEAN project (contract no. FP6-IST-026980).

Contact Information Marko Hoyer
Email: hoyer@offis.de

Contact Information Domenik Helms
Email: helms@offis.de

Contact Information Wolfgang Nebel
Email: nebel@offis.de
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