Modelling the Impact of High Level Leakage Optimization Techniques on the Delay of RT-Components
Marko Hoyer1
, Domenik Helms1
and Wolfgang Nebel2 
| (1) |
OFFIS Research Institute D - 26121 Oldenburg, Germany |
| (2) |
University of Oldenburg, D - 26121 Oldenburg, Germany |
Abstract
To adress the problem of static power consumption, approaches as ABB and AVS have been proposed to reduce runtime leakage
in integrated circuits. Applying these techniques is a trade off between power and delay, which is best decided early in the
design flow. Therefore high level power and delay estimation is needed. In our work, we present a fast RT Level delay macro
model considering supply and bias voltages and temperature. Errors below 5% combined with only few characterization data enables
this approach to be used by high level design tools to support leakage optimization by e.g. ABB and AVS.
This work was supported by the European Commission within the Sixth Framework Programme through the CLEAN project (contract
no. FP6-IST-026980).
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