In this work, we included Poole-Frenkel (P-F) detrapping mechanism to our simulator to calculate programming/erasing characteristics of charge trapping memory, and comprehensively analyze the impacts of temperature, trap depth and parameters of P-F model on program window and erasing speed. Our results reveal that Poole-Frenkel effect could accelerate the erasing operation, but it also could reduce the program window and cause the electric characteristics sensitive to temperature.