Investigations were made of the electrical properties, the cathodolumiescence and photoconductivity spectra, and the temperature dependence of the majority carrier lifetime in gallium arsenide with a high concentration of tin (n=2·10¹⁸ cm^–3, 1.5·10¹⁷ cm^–3) that was doped with copper under different diffusion regimes. Measurements of the Hall effect revealed centers with an ionization energy 0.175 ± 0.005 eV, their concentration depending on the rate of cooling of the samples. The cathodoluminescence and Hall effect data suggest that the cathodoluminescence band observed at 1.35 eV in GaAsSnCu is associated with radiative transitions of electrons to centers with _a =E_v + 0.175 eV. The hole lifetime in GaAsSnCu has a complicated temperature dependence which can be explained qualitatively by the presence of two types of capture center.