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Brief Communications and Letters to the Editor
I. V. Ivonin, L. M. Krasil'nikova and M. P. Yakubenya
Book Chapter
GaAs Thermally Based MEMS Devices—Fabrication Techniques, Characterization and Modeling MEMS Device Design and Fabrication MEMS Device Thermo-Mechanical Characterization MEMS Device Thermo-Mechanical Modeling
Tibor Lalinský, Milan Držík, Jiří Jakovenko and Miroslav Husák
2006, MEMS/NEMS, Pages 383-443
Reference Work Entry
Optoelectronics
2004, Robust Electronic Design Reference Book, Pages 400-423
Simulation, Modeling, and Experimental Studies of High-Gain Gallium Arsenide Photoconductive Switches for Ultra-Wideband Applications
E. Schamiloglu, N. E. Islam, C. B. Fleddermann, B. Shipley and R. P. Joshi, et al.
2002, Ultra-Wideband Short-Pulse Electromagnetics 4, Part 3, Pages 221-228
In-Situ Scanning Electron Microscope Indentation of Gallium Arsenide
C. Pouvreau, K. Wasmer, J. Giovanola, J. Michler and J. M. Breguet, et al.
2006, Fracture of Nano and Engineering Materials and Structures, B., IT4., Pages 61-62
Characteristics of Trap-Filled GaAs Photoconductive Switches Used in High Gain Pulsed Power Applications
N. Islam, E. Schamiloglu, A. Mar, F. Zutavern and G. Loubriel, et al.
2002, Ultra-Wideband, Short-Pulse Electromagnetics 5, Part 4, Pages 461-466
Ultra-Wideband Sources and Antennas
William Prather, Forrest Agee, Carl Baum, Jane Lehr and James O’Loughlin, et al.
2002, Ultra-Wideband Short-Pulse Electromagnetics 4, Part 2, Pages 119-130
Al-As-Ga (Aluminium-Arsenic-Gallium) Non-Ferrous Metal Ternary Systems. Semiconductor Systems: Phase Diagrams, Crystallographic and Thermodynamic Data
Materials Science International Team MSIT®
Landolt-Börnstein - Group IV Physical Chemistry, 1, Volume 11C1, Non-Ferrous Metal Systems. Part 1, Pages 1-28
Phonons
2006, Fundamentals of Solid State Engineering, Pages 161-192
gallium arsenide (GaAs), excited states related to transition metal impurities
Collaboration: Authors and Editors of the LB Volumes III/22B-41A2b
Landolt-Börnstein - Group III Condensed Matter, 1, Volume 41A2b, Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds., Pages 1-6
gallium arsenide (GaAs), magnetic properties and ESR of transition metal impurities
Landolt-Börnstein - Group III Condensed Matter, 1, Volume 41A2b, Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds., Page 1
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