Determination of the activation energy of tuneling recombination for radiation-induced defects in CaO

Yu. I. Aristov and V. N. Parmon

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Abstract

Tunneling recombination between surface Fss +- and bulk V-centers has been studied by ESR technique over the temperature range of 77–240 K. The activation energy has been measured.
Vcy rcyacybcyocytcyiecy icyzcyucychcyiecyncyacy tcyucyncyncyiecylcysoftcyncyacyyacy rcyiecykcyocymcybcyicyncyacytscyicyyacy Fs +-tscyiecyncytcyrcyacy scy ocybcysoftcyiecymcyncyycymcy V-tscyiecyncytcyrcyocymcy vcy ocybcylcyacyscytcyicy tcyiecymcypcyiecyrcyacytcyucyrcy 77–240 Kcy icy ocypcyrcyiecydcyiecylcyiecyncyacy ecyncyiecyrcygcyicyyacy acykcytcyicyvcyacytscyicyicy ecytcyocygcyocy pcyrcyocytscyiecyscyscyacy.

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