In the course of the present work CaF
2 epitaxialfilms were grown on Si(111) substrates by means ofMBE. The Si substrates were chemically cleaned priorto insertion into the system. The final volatile oxidewas desorbed
in situ by heating to 850
. CaF
2 was evaporated from aKnudsen-type cell by use of a graphite crucible, whilethe growth temperature was held at 650
.RHEED (Reflection High Energy Electron Diffraction)has been used to monitor the film growth
in situand to study the epitaxial quality. Also we have usedthe MeV He
+ RBS channeling technique to look atdefects and to measure strain in the CaF
2 layer.Usually good crystallographic properties are achievedunder optimum growth conditions, with values of
min < 5%.="" electrical="" properties="" aremeasured="" by="" use="" of="" a="" special="" mis="">
Molecular beam epitaxy - dielectric fluoride films - epitaxial growth - thin films - heteroepitaxy - silicon