The influence of the spectrum and bulk scattering anisotropies on the Reggi-Leduc and Maggi-Reggi-Leduc effects is investigated in semiconducting films of the electronic silicon type under classical dimensional effect conditions. It is shown that in contrast to a massive specimen these effects depend not only on a single parameter, the ratio between the anisotropy coefficients of the effective mass and the relaxation time but also on each of them separately, which permit their direct determination. It is also established that the Reggi-Leduc coefficient depends differently on the film thickness, depending on the relationship between the electron and phonon parts of the crystal heat conductivity.