Volume 45, Number 4, 535-539, DOI: 10.1023/A:1019798805905

Formation of Short Pulses with a Subnanosecond Rise Time and a Peak Power of Up to 1 GW by a Semiconductor Avalanche Sharpener

E. A. Alichkin, S. K. Lyubutin, A. V. Ponomarev, S. N. Rukin and B. G. Slovikovskii

View Related Documents

Abstract

The results of experiments on the formation of high-power pulses with a rise time of <1 ns="" and="" a="" duration="" of="" 1–2="" ns="" by="" a="" solid-state="" semiconductor="" sharpener="" operating="" in="" the="" mode="" of="" delayed="" impact="" ionization="" wave="" are="" presented.="" a="" peak="" power="" of="" 1="" gw="" in="" a="" single-pulse="" operation="" mode="" and="" 750="" mw="" at="" a="" pulse="" repetition="" rate="" of="" 3.5="" khz="" was="" obtained="" across="" a="">OHgr load. Experiments on the pulse transformation using a forming line with a variable wave impedance and generation of bipolar voltage pulses are described.

Fulltext Preview

Image of the first page of the fulltext document