Photoluminescence from amorphous Ge
2S
3 and Ge
xSe
1–x has been studied at 77°K. Photoluminescence results obtained with amorphous Ge
2S
3 and Ge
2Se
3 at 4.2°K are presented here for the first time. All the semiconductors studied in this work had one broad photoluminescence band with its peak at E
Eg/2. A strong electron-phonon interaction in these samples is indicated by the strong exponential temperature dependence observed in the photoluminescence intensity.
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 7–10, October, 1981.
We wish to express our deep appreciation to Academy of Sciences Corresponding Member Kh. I. Amirkhanov for useful advice during discussions of this work.