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Journal Issue Printable view
Volume 33, Number 5 / May, 2004

Volume 33, Number 5 / May, 2004

JournalJournal of Electronic Materials
PublisherSpringer Boston
ISSN0361-5235 (Print) 1543-186X (Online)
Pages383-486
Subject CollectionChemistry and Materials Science
SpringerLink DateSaturday, April 07, 2007
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22 ArticlesFirst | 1-10 | 11-20 | 21-22 | Next
Article
Foreword
Michael A. Capano and Suzanne Mohney
Full TextPDF (22.6 KB)
 383
Article
Optical and electrical properties of AlGaN films implanted with Mn, Co, or Cr
A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, R. M. Frazier, G. T. Thaler, C. R. Abernathy, S. J. Pearton, J. M. Zavada and R. G. Wilson
Full TextPDF (79.8 KB)
 384-388
Article
Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending
T. Paskova, V. Darakchieva, E. Valcheva, P. P. Paskov, I. G. Ivanov, B. Monemar, T. Böttcher, C. Roder and D. Hommel
Full TextPDF (236.8 KB)
 389-394
Article
Electrical and structural properties of low-resistance Ti/Al/Re/Au ohmic contacts to n-type GaN
V. Reddy, Sang-Ho Kim and Tae-Yeon Seong
Full TextPDF (135.6 KB)
 395-399
Article
Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors
W. S. Tan, P. A. Houston, G. Hill, R. J. Airey and P. J. Parbook
Full TextPDF (156.3 KB)
 400-407
Article
Time-dependent degradation of AlGaN/GaN heterostructures grown on silicon carbide
D. W. Gotthold, S. P. Guo, R. Birkhahn, B. Albert, D. Florescu and B. Peres
Full TextPDF (194.1 KB)
 408-411
Article
Characterization of multiple carriers in GaN using variable magnetic-field hall measurements
C. H. Swartz, R. P. Tompkins, T. H. Myers, D. C. Look and J. R. Sizelove
Full TextPDF (92.4 KB)
 412-417
Article
Vanadium-based ohmic contacts to n-type Al0.6Ga0.4N
J. H. Wang, S. E. Mohney, S. H. Wang, U. Chowdhury and R. D. Dupuis
Full TextPDF (271.4 KB)
 418-421
Article
Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design
L. Shen, R. Coffie, D. Buttari, S. Heikman, A. Chakraborty, A. Chini, S. Keller, S. P. Denbaars and U. K. Mishra
Full TextPDF (252.3 KB)
 422-425
Article
Lateral schottky GaN rectifiers formed by Si+ ion implantation
Y. Irokawa, Jihyun Kim, F. Ren, K. H. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton, C. -C. Pan, G. -T. Chen and J. -I. Chyi
Full TextPDF (161.2 KB)
 426-430
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