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Journal Issue
Volume 33, Number 5 / May, 2004
Journal
Journal of Electronic Materials
Publisher
Springer Boston
ISSN
0361-5235 (Print) 1543-186X (Online)
Pages
383-486
Subject Collection
Chemistry and Materials Science
SpringerLink Date
Saturday, April 07, 2007
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22 Articles
First
|
1-10
|
11-20
|
21-22
|
Next
Article
Foreword
Michael A. Capano
and
Suzanne Mohney
PDF (22.6 KB)
383
Article
Optical and electrical properties of AlGaN films implanted with Mn, Co, or Cr
A. Y. Polyakov
,
N. B. Smirnov
,
A. V. Govorkov
,
R. M. Frazier
,
G. T. Thaler
,
C. R. Abernathy
,
S. J. Pearton
,
J. M. Zavada
and
R. G. Wilson
PDF (79.8 KB)
384-388
Article
Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending
T. Paskova
,
V. Darakchieva
,
E. Valcheva
,
P. P. Paskov
,
I. G. Ivanov
,
B. Monemar
,
T. Böttcher
,
C. Roder
and
D. Hommel
PDF (236.8 KB)
389-394
Article
Electrical and structural properties of low-resistance Ti/Al/Re/Au ohmic contacts to n-type GaN
V. Reddy
,
Sang-Ho Kim
and
Tae-Yeon Seong
PDF (135.6 KB)
395-399
Article
Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si
3
N
4
passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors
W. S. Tan
,
P. A. Houston
,
G. Hill
,
R. J. Airey
and
P. J. Parbook
PDF (156.3 KB)
400-407
Article
Time-dependent degradation of AlGaN/GaN heterostructures grown on silicon carbide
D. W. Gotthold
,
S. P. Guo
,
R. Birkhahn
,
B. Albert
,
D. Florescu
and
B. Peres
PDF (194.1 KB)
408-411
Article
Characterization of multiple carriers in GaN using variable magnetic-field hall measurements
C. H. Swartz
,
R. P. Tompkins
,
T. H. Myers
,
D. C. Look
and
J. R. Sizelove
PDF (92.4 KB)
412-417
Article
Vanadium-based ohmic contacts to n-type Al
0.6
Ga
0.4
N
J. H. Wang
,
S. E. Mohney
,
S. H. Wang
,
U. Chowdhury
and
R. D. Dupuis
PDF (271.4 KB)
418-421
Article
Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design
L. Shen
,
R. Coffie
,
D. Buttari
,
S. Heikman
,
A. Chakraborty
,
A. Chini
,
S. Keller
,
S. P. Denbaars
and
U. K. Mishra
PDF (252.3 KB)
422-425
Article
Lateral schottky GaN rectifiers formed by Si
+
ion implantation
Y. Irokawa
,
Jihyun Kim
,
F. Ren
,
K. H. Baik
,
B. P. Gila
,
C. R. Abernathy
,
S. J. Pearton
,
C. -C. Pan
,
G. -T. Chen
and
J. -I. Chyi
PDF (161.2 KB)
426-430
22 Articles
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1-10
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|
21-22
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