919-924
Regular Issue Paper
Indium-tin oxide/Si contacts with In- and Sn-diffusion barriers in polycrystalline Si thin-film transistor liquid-crystal displays
Hojin Ryu, Jinmo Kang, Younggun Han, Donghwan Kim and James Jungho Pak, et al.
925-931
Regular Issue Paper
Stability of fluorinated parylenes to oxygen reactive-ion etching under aluminum, aluminum oxide, and tantalum nitride overlayers
Jay J. Senkevich, B. Wang, J. B. Fortin, M. C. Nielsen and J. F. McDonald, et al.
932-934
Regular Issue Paper
Comparative studies of p-type InP layers formed by Zn3As2 and Zn3P2 diffusion
Shiwei Feng, Jun Hu, Yicheng Lu, Boris V. Yakshinskiy and James D. Wynn, et al.
935-938
Regular Issue Paper
Ta/Au ohmic contacts to n-type ZnO
H. Sheng, N. W. Emanetoglu, S. Muthukumar, B. V. Yakshinskiy and S. Feng, et al.
939-947
Regular Issue Paper
Effects of solid-state annealing on the interfacial intermetallics between tin-lead solders and copper
Kithva H. Prakash and Thirumany Sritharan
948-951
Regular Issue Paper
Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors
Y. M. Hsin, H. T. Hsu, K. P. Hseuh, W. B. Tang and C. C. Fan, et al.
952-956
Regular Issue Paper
Thin-film reactions during diffusion soldering of Cu/Ti/Si and Au/Cu/Al2O3 with Sn interlayers
M. W. Liang, T. E. Hsieh, S. Y. Chang and T. H. Chuang
957-963
Regular Issue Paper
Effects of vacuum annealing on electrical properties of GaN contacts
Ippei Fujimoto, Hirokuni Asamizu, Masahiro Shimada, Miki Moriyama and Naoki Shibata, et al.
964-971
Regular Issue Paper
The electrical characteristics of 4H-SiC schottky diodes after inductively coupled plasma etching
N. O. V. Plank, Liudi Jiang, A. M. Gundlach and R. Cheung
972-975
Regular Issue Paper
Fabrication of ultra-thin strained silicon on insulator
T. S. Drake, C. Ní Chléirigh, M. L. Lee, A. J. Pitera and E. A. Fitzgerald, et al.
976-980
Regular Issue Paper
Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition
Shawn G. Thomas, Sushil Bharatan, Robert E. Jones, Rainer Thoma and Thomas Zirkle, et al.
L5-L8
Letter
Deep level transient spectroscopy study of electron-irradiated CuInSe2 thin films
Hiroshi Okada, Naoki Fujita, Hae-Seok Lee, Akihiro Wakahara and Akira Yoshida, et al.