We show that the efficiency of manipulating electron spins in semiconductor quantum wells can be enhanced by tuning strain strengths. The combined effects of intrinsic and strain-induced spinorbit couplings vary for different quantum wells, which provide an alternative route to understand the experimental phenomena brought in by the strain. The contribution to the electron-dipole-spin-resonance intensity induced by the strain can be changed through adjusting the direction of the ac electric field in the x-y plane of the quantum well and tuning the strain strengths.