Comparison of Quasi-/Pseudo-Floating Gate Techniques and Low-Voltage Applications

Inchang Seo and Robert M. Fox

View Related Documents

Abstract

The quasi- or pseudo-floating gate (QFG) technique addresses a key issue with the floating-gate MOS transistor technique, by using ultra-high resistances to provide dc paths to otherwise floating nodes. Several ways have been suggested to implement the quasi-infinite resistors (QIRs). In this paper, basic QIR structures are analyzed and compared, and three sources of error, dc offset, signal distortion, and signal-dependent offset, are defined. Then, through simulations and experiments, the suitability of several QIR implementations for use in various applications is compared. A particular QIR implementation is found to minimize dc offset, but requires voltage swings to be limited to less than a diode turn-on voltage. Some application circuits using quasi-floating gate are presented, including a QFG translinear geometric-mean circuit and QFG low-voltage fully-differential amplifiers with QFG common-mode feedback using several QIR structures. Measurements on current-mode QFG circuits exhibit large offsets and very long turn-on transients, which could limit practical application of this technique.

Key Words  Analog - low-voltage - floaing-gate - ac-coupled

Inchang Seo received B.S. and M.S. degrees in physics from Hanyang University, Seoul, Korea, in 1988 and 1990. He also received M.S. and Ph.D degrees in electrical and computer engineering from the University of Florida, Gainesville, Florida, in 2000 and 2004, respectively. During 1990–1997, he worked as a researcher at the Agency for Defence Development (ADD), Chinhae, Korea. His responsibility was design, development, and evaluation of underwater acoustic transducers and sonar systems which were based on piezoelectric, magnetostrictive, and fiber-optic transducers. His main research interests involve low-voltage, low-power, high-precision analog and mixed-signal integrated circuit design including low-voltage wide-band DS data converters, precise bias circuit blocks, low-power charge transfer amplifiers and filters, floating-gate CMOS analog circuits, and quasi-floating gate analog applications.
Robert M. Fox received the B. S. degree in Physics from the University of Notre Dame in 1972, and M. S. and Ph. D. degrees in Electrical Engineering from Auburn University in 1981 and 1986, respectively. Since 1986 he has been on the Electrical and Computer Engineering faculty at the University of Florida, where he is an Associate Professor. Dr. Fox's research emphasizes circuit design and modeling for advanced IC technologies. He has worked on a variety of topics, including analog circuit design, cryogenic electronics, circuit design with SOI, radiation response of semiconductors, noise modeling, and modeling of transistor self-heating. Currently his research interests center on design-oriented analysis of analog integrated circuits, including low-voltage circuit techniques, design of log-domain circuits, analog test strategies and transistor modeling. Dr. Fox is a member of the Analog Signal Processing Technical Committee of the Circuits and System Society, having served as Committee Chairman and ISCAS Track Chair. He is a member of the Analog/Mixed-Signal Technical Committee for the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

Fulltext Preview

Image of the first page of the fulltext document