The electron-diffraction patterns from silicon with curved Kikuchi lines were obtained. It is revealed that curving of Kikuchi
lines takes place simultaneously with the shift of point reflections from their normal positions. It is found that curving
of Kikuchi lines is caused by limited defects in silicon crystals.
Original Russian Text © R.K. Karakhanyan, K.R. Karakhanyan, 2007, published in Izvestiya NAN Armenii, Fizika, 2007, Vol. 42,
No. 2, pp. 120–122.