Spatial variations of the local electric field in current-carrying thin gold films were studied with a scanning tunneling
microscope on a nanometer scale. With a refined scanning tunneling potentiometry technique, it was possible to determine the
local electric fields within single grains. At grain boundaries, we observe potential drops on length scales of less than
1 nm which exceed the potential difference within a grain greatly. We interpret our findings by applying a theory that models
grain boundaries as barriers with a reflectivity R for the conduction electrons. With the assumption of isotropic background
scattering within each grain, we determine the local current-density j(x,y) that passes a grain boundary. From that, we obtain
the reflectivity of individual grain boundaries and find values ofR = 0.7toR = 0.9 which is much higher than expected from
macroscopic experiments.
Key words Grain boundary scattering - scanning tunneling microscopy (STM) - scanning tunneling potentiometry (STP) - thin film resistivity