Volume 26, Number 4, 383-386, DOI: 10.1007/s11664-997-0106-8

Scanning tunneling potentiometry study of electron reflectivity of a single grain boundary in thin gold films

M. A. Schneider, M. Wenderoth, A. J. Heinrich, M. A. Rosentreter and R. G. Ulbrich

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Abstract

Spatial variations of the local electric field in current-carrying thin gold films were studied with a scanning tunneling microscope on a nanometer scale. With a refined scanning tunneling potentiometry technique, it was possible to determine the local electric fields within single grains. At grain boundaries, we observe potential drops on length scales of less than 1 nm which exceed the potential difference within a grain greatly. We interpret our findings by applying a theory that models grain boundaries as barriers with a reflectivity R for the conduction electrons. With the assumption of isotropic background scattering within each grain, we determine the local current-density j(x,y) that passes a grain boundary. From that, we obtain the reflectivity of individual grain boundaries and find values ofR = 0.7toR = 0.9 which is much higher than expected from macroscopic experiments.

Key words  Grain boundary scattering - scanning tunneling microscopy (STM) - scanning tunneling potentiometry (STP) - thin film resistivity

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