Volume 41, Number 14, 4405-4412, DOI: 10.1007/s10853-006-0152-2

Interfacial structure in silicon nitride sintered with lanthanide oxide

C. Dwyer, A. Ziegler, N. Shibata, G. B. Winkelman, R. L. Satet, M. J. Hoffmann, M. K. Cinibulk, P. F. Becher, G. S. Painter and N. D. Browning, et al.

From the issue entitled "Special Section: Frontiers of Electron Microscopy in Materials Science 2005"

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Abstract

Three independent research groups present a comparison of their structural analyses of prismatic interfaces in silicon nitride densified with the aid of lanthanide oxide Ln2O3. All three groups obtained scanning transmission electron microscope images which clearly reveal the presence of well-defined Ln segregation sites at the interfaces, and, moreover, reveal that these segregation sites are element-specific. While some results differ across the three research groups, the vast majority exhibits good reproducibility.

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