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Masanori Professor Okuyama and Yoshihiro Ishibashi
Front matter
3-23
Theoretical Aspects of Phase Transitions in Ferroelectric Thin Films
25-59
Chemical Solution Depositionof Layer-Structured Ferroelectric Thin Films
59-77
Pb-Based Ferroelectric Thin Films Prepared by MOCVD
77-91
Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi 4Ti 3O 12-Based Films
91-105
Rhombohedral PZT Thin Films Prepared by Sputtering
105-126
Scanning Nonlinear Dielectric Microscopy
127-148
Analysis of Ferroelectricity and Enhanced Piezoelectricity near the Morphotropic Phase Boundary
147-162
Correlation Between Domain Structures and Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions
161-175
Relaxor Superlattices: Artificial Control of the Ordered–Disordered State of B-Site Ions in Perovskites
177-199
Physics of Ferroelectric Interfaces: An Attempt at Nanoferroelectric Physics
199-220
Preparation and Properties of Ferroelectric–Insulator–Semiconductor Junctions Using YMnO 3 Thin Films
219-241
Improvement of Memory Retention in Metal–Ferroelectric–Insulator–Semiconductor (MFIS) Structures
Back matter
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