A new system for a photoelectric converter is proposed, and its photoelectric properties are studied, using an n-CdO/a-C/p-Si heterostructure as an example. The distinguishing feature of the structure is that the broad-band insulating layer of SiO₂ on the surface of the silicon is replaced by a narrow-band layer of amorphous carbon, while a layer of CdO is used as the upper electrode. It is shown that an increase of the short-circuit current because of impact ionization can be expected in such a heterostructure. The results of the paper show that it is worthwhile to use CdO films in practice as transparent electrodes.